New generation indium phosphide laser diodes increase performance
Vancouver, WA USA November 19, 2008 – nLIGHT has announced a new generation of 1400 nm to 2000 nm semiconductor laser diodes based on indium phosphide (InP) that provide both higher power and better efficiency. These wavelengths open up a wide range of surgical and aesthetic medical applications through either direct use or to pump holmium or erbium lasers.
At 1.9 microns, the Pearl™ fiber-coupled module provides up to 20 watts output power from a single 400 micron 0.22NA fiber with >10% wall-plug efficiency. Single emitter chips produce up to 1.5 watts rated power on expansion matched substrates.
At 1.4 and 1.5 microns, the Pearl™ module provides up to 40 watts from a single 400 micron 0.22NA fiber and >30% wall-plug efficiency. Single emitter chips produce up to 3.5 watts rated power on expansion matched substrates.
“For more than five years nLIGHT has supported advanced research to develop applications using InP semiconductor laser diodes,” commented Joe DeBartolo, nLIGHT VP Sales and Marketing. “With our experience and over 13,000 actual hours on lifetest under accelerated current and temperature conditions, we are excited to help bring new solutions to medical applications.”
nLIGHT will feature its enhanced InP product lines at MEDICA 2008 in Düsseldorf, Germany, November 19-21, 2008 at booth #16 E10-15.